EPC2361 eGaN® FETs deliver high-current, low-loss switching in a 36 V to 65 V input, 48 V output platform High-power ...

Solid-state transformer designs have been around for decades. Now data centers may finally give the chip-filled devices their ...

What if you'd invested in Monolithic Power (MPWR) ten years ago? It may not have been easy to hold on to MPWR for all that ...

Discover Practical MOSFET Electronics by Dogan Ibrahim, with LTspice simulations, Arduino motor control, amplifiers, and ...

Nowadays big advances are made by scaling up—think more chips packed into ever-bigger data centers. But as we near the ...

The Ministry of Science and ICT said a research team led by Cho Moon-ho, Director General of the Institute for Basic Science ...

Discover 12 family activities during power outages in the '60s, '70s, and '80s, from candlelit board games to listening to ...

A statistical reliability study of a Germanium-source hetero-dielectric double gate tunnel FET reveals that channel-localized ...

Four new devices target humanoid robots and industrial systems, offering silicon-compatible footprints and claimed switching-loss cuts of 40–70%.

Innovation, R&D, partnerships, cost-efficient production and Asia-Pacific expansion target EVs, IoT, 5G and automation, leveraging low-noise, high-impedance JFETs.Dublin, Oct. 15, 2026 (GLOBE NEWSWIRE ...

Global chip giants shift to custom silicon as Moore's Law slows. India's Semicon 2.0 mission eyes $1.5 trillion market. Learn ...

A research team led by Director Jo Moon-ho at the Institute for Basic Science (IBS) has developed a modular transistor ...